Comprehensive BTI reliability study on trench field-stop IGBT under different applications

IGBT is a promising candidate in Si-based device to be used in high-voltage applications due to its low conduction loss and fast switching speed. Recent years, IGBT has become popular as compared to other power discrete devices, such as MOSFET and BJT as IGBT plays a leading role in energy conversat...

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Bibliographic Details
Main Author: Sim, Zhi Lin
Other Authors: Chen Xiaodong
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
Subjects:
BTI
Online Access:https://hdl.handle.net/10356/175646
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Institution: Nanyang Technological University
Language: English