Comprehensive BTI reliability study on trench field-stop IGBT under different applications
IGBT is a promising candidate in Si-based device to be used in high-voltage applications due to its low conduction loss and fast switching speed. Recent years, IGBT has become popular as compared to other power discrete devices, such as MOSFET and BJT as IGBT plays a leading role in energy conversat...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
Nanyang Technological University
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/175646 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |