A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

Recent device reliability studies have observed the shallow-to-deep transformation of electron-trap states under positive-bias temperature stressing. Being two typical types of defects in the high-κ oxide, the oxygen vacancy and oxygen interstitial have been investigated in many simulations, but res...

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Bibliographic Details
Main Authors: Gu, Chenjie, Ang, Diing Shenp, Gao, Yuan, Gu, Renyuan, Zhao, Ziqi, Zhu, Chao
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/86839
http://hdl.handle.net/10220/45202
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Institution: Nanyang Technological University
Language: English