A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

• المؤلفون الرئيسيون: Gu, Chenjie, Ang, Diing Shenp, Gao, Yuan, Gu, Renyuan, Zhao, Ziqi, Zhu, Chao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: CMOS Reliability; Dynamic Bias Temperature Instability (BTI)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86839; http://hdl.handle.net/10220/45202
• المؤسسة: Nanyang Technological University

Recent device reliability studies have observed the shallow-to-deep transformation of electron-trap states under positive-bias temperature stressing. Being two typical types of defects in the high-κ oxide, the oxygen vacancy and oxygen interstitial have been investigated in many simulations, but res...