發送短信

數:

提供者:

CAPTCHA:

 _    _     _____    _____      ______    _____   
| || | ||  |  ___|| |  __ \\   /_   _//  / ____|| 
| || | ||  | ||__   | |  \ ||   -| ||-  / //---`' 
| \\_/ ||  | ||__   | |__/ ||   _| ||_  \ \\___   
 \____//   |_____|| |_____//   /_____//  \_____|| 
  `---`    `-----`   -----`    `-----`    `----`

Please enter what you see:

發送短信 : A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET