The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

• Main Authors: Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Gate Stack; Semiconductor Devices; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/102696; http://hdl.handle.net/10220/47785
• Institution: Nanyang Technological University

Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temper...