New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing

• Main Authors: Boo, Ann Ann, Tung, Zhi Yan, Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Bias-temperature Instability; High-k Gate Dielectric
• Online Access: https://hdl.handle.net/10356/86847; http://hdl.handle.net/10220/45200
• Institution: Nanyang Technological University

New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activat...