New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing

New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activat...

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Bibliographic Details
Main Authors: Boo, Ann Ann, Tung, Zhi Yan, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/86847
http://hdl.handle.net/10220/45200
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Institution: Nanyang Technological University
Language: English
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Summary:New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activation energies, and power-law time exponents. In addition, a corner temperature (~125 °C), which marks an increase in the activation energy from the high-to-low temperature regime, is revealed in both the trapped-hole transformation and the SILC generation, further highlighting the strongly correlated behaviors of the two effects. These findings corroborate an earlier hypothesis that both phenomena share a common degradation mechanism.