On the "switching defects" in the SiON and high-k gate dielectrics subjected to bias-temperature stressing

بواسطة Boo, Ann Ann
منشور في 2015

PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

بواسطة Boo, Ann Ann.
منشور في 2009

New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing

بواسطة Boo, Ann Ann, Tung, Zhi Yan, Ang, Diing Shenp
منشور في 2018