PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

• Main Author: Boo, Ann Ann.
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/17896
• Institution: Nanyang Technological University

Negative bias temperature instability was first discovered in 1966. It only became an important reliability issue in silicon integrated circuits because device scaling leads to an increase in gate electric field. Although numerous papers have been published on NBTI, there were many discrepancies bet...