Study of degradation mechanisms in SiON gate dielectric film subjected to negative bias temperature instability (NBTI) stress

• Main Author: Kang, Chun Wei.
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/49677
• Institution: Nanyang Technological University

Negative Bias Temperature Instability (NBTI) on thin and thick PMOS with SION oxide is examined using measurement methods with different measurement delays. UFS method with 100ns delay per measurement point which is the fastest NBTI measurement to-date, Slow measurement with 40µs delay per measureme...