Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics

• Main Author: Du, Guoan.
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/51195
• Institution: Nanyang Technological University

The initial stage of the project involved the development of a new ultra-fast switching (UFS) method for the measurement of the bias temperature instability (BTI) phenomenon in state-of-the-art MOSFETs. This is followed by a systematic and detailed investigation on the negative-bias temperature inst...