New insights of BTI degradation in MOSFETs with SiON gate dielectrics

10.1149/1.3122098

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Bibliographic Details
Main Authors: Li, M.-F., Huang, D., Liu, W.J., Liu, Z.Y., Huang, X.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84008
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Institution: National University of Singapore