Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics
The initial stage of the project involved the development of a new ultra-fast switching (UFS) method for the measurement of the bias temperature instability (BTI) phenomenon in state-of-the-art MOSFETs. This is followed by a systematic and detailed investigation on the negative-bias temperature inst...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2013
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Online Access: | http://hdl.handle.net/10356/51195 |
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Institution: | Nanyang Technological University |
Language: | English |
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