Bias temperature instability study on switching defects in SiON and high-K gate dielectrics
Device reliability remains an extremely challenging issue for the state-of-the-art complementary metal-oxide-semiconductor field-effect transistor (CMOS, MOSFET). One of the most challenging reliability issues in CMOS devices is the bias-temperature instability (BTI). Previous studies on SiON and hi...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2019
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/88969 http://hdl.handle.net/10220/47652 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |