PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

Negative bias temperature instability was first discovered in 1966. It only became an important reliability issue in silicon integrated circuits because device scaling leads to an increase in gate electric field. Although numerous papers have been published on NBTI, there were many discrepancies bet...

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書目詳細資料
主要作者:	Boo, Ann Ann.
其他作者:	Ang Diing Shenp
格式:	Final Year Project
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/17896
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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