Characterization of dynamic NBTI by ultra-fast charge pumping and ultra-fast switching method
Till very recently, the most well-known model used to explain the NBTI phenomenon is the reaction-diffusion (R-D) model, which describes the evolution of Si/SiO2 interface states (Nit) contributing to NBTI based on a hydrogen transport mechanism. However, there has been much on-going discussion rega...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/65268 |
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| Institution: | Nanyang Technological University |
| Language: | English |