Characterization of dynamic NBTI by ultra-fast charge pumping and ultra-fast switching method

• Main Author: Teo, Andy Zhiqiang
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/65268
• Institution: Nanyang Technological University

Till very recently, the most well-known model used to explain the NBTI phenomenon is the reaction-diffusion (R-D) model, which describes the evolution of Si/SiO2 interface states (Nit) contributing to NBTI based on a hydrogen transport mechanism. However, there has been much on-going discussion rega...