Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics

• المؤلف الرئيسي: Tan, Shyue Seng
• مؤلفون آخرون: Chen Tupei
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/3384
• المؤسسة: Nanyang Technological University

It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NB...