Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NB...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3384 |
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| Institution: | Nanyang Technological University |