Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NB...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3384 |
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| Institution: | Nanyang Technological University |
| Summary: | It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed. |
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