Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics

Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics

It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NB...

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Main Author: Tan, Shyue Seng
Other Authors: Chen Tupei
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:https://hdl.handle.net/10356/3384
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-33842023-07-04T17:11:01Z Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics Tan, Shyue Seng Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:28:59Z 2008-09-17T09:28:59Z 2005 2005 Thesis Tan, S. S. (2005). Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3384 10.32657/10356/3384 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Tan, Shyue Seng
Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
description It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed.
author2 Chen Tupei
author_facet Chen Tupei
Tan, Shyue Seng
format Theses and Dissertations
author Tan, Shyue Seng
author_sort Tan, Shyue Seng
title Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
title_short Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
title_full Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
title_fullStr Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
title_full_unstemmed Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
title_sort experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
publishDate 2008
url https://hdl.handle.net/10356/3384
_version_ 1772826024079261696

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