Improved electrical characteristic of negative bias temperature instability
Negative Bias Temperature Instability (NBTI) is a critical reliability issue of metal-oxide-semiconductor field effect transistors (MOSFETs) due to imperfections located at the oxide-semiconductor interface and in the gate dielectric. As the major characteristic parameter of NBTI, the threshold volt...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/51133 |
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| Institution: | Nanyang Technological University |
| Language: | English |