Improved electrical characteristic of negative bias temperature instability

• Main Author: Hu, Youzhou.
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/51133
• Institution: Nanyang Technological University

Negative Bias Temperature Instability (NBTI) is a critical reliability issue of metal-oxide-semiconductor field effect transistors (MOSFETs) due to imperfections located at the oxide-semiconductor interface and in the gate dielectric. As the major characteristic parameter of NBTI, the threshold volt...