Correlation between oxide trap generation and negative-bias temperature instability

• المؤلفون الرئيسيون: Boo, A. A., Teo, Z. Q., Leong, K. C., Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85049; http://hdl.handle.net/10220/11335
• المؤسسة: Nanyang Technological University

Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When...