Correlation between oxide trap generation and negative-bias temperature instability

Correlation between oxide trap generation and negative-bias temperature instability

Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When...

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書目詳細資料
Main Authors:	Boo, A. A., Teo, Z. Q., Leong, K. C., Ang, Diing Shenp
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/85049 http://hdl.handle.net/10220/11335
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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