Are interface state generation and positive oxide charge trapping under negative-bias temperature stressing correlated or coupled?

• Main Authors: Ho, T. J. J., Boo, A. A., Teo, Z. Q., Leong, K. C., Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99239; http://hdl.handle.net/10220/13447
• Institution: Nanyang Technological University

Studies have suggested that interface state generation under negative-bias temperature (NBT) stress results in positive oxide charge trapping. The latter is ascribed to the trapping of hydrogen species, from Si-H bond dissociation, in the oxide bulk. In this paper, we present evidence from dynamic N...