Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs

• Main Authors: Gao, Yuan, Ang, Diing Shenp, Young, C. D., Bersuker, G.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Conference or Workshop Item
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/102009; http://hdl.handle.net/10220/16410

Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transfor...