Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transfor...
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Main Authors: | Gao, Yuan, Ang, Diing Shenp, Young, C. D., Bersuker, G. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/102009 http://hdl.handle.net/10220/16410 |
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Institution: | Nanyang Technological University |
Language: | English |
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