Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress

Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Saved in:
Bibliographic Details
Main Authors: Chim, W.K., Teh, G.L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
C-V measurement
Electron trap
Electrostatic discharge
Hole trap
MOS capacitor
Neutral electron trap
Oxide reliability
Thin oxide
Transmission line pulsing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62462
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/62462

Similar Items