Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing

Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Lim, P.S., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
C-V measurement
Electrical annealing
Electrostatic discharge
Hole trap
Lateral nonuniform charge
MOS capacitor
Oxide reliability
Stress-induced leakage current
Transmission line pulsing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62817
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/62817

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