Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors:	Lim, P.S., Chim, W.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	C-V measurement Electrical annealing Electrostatic discharge Hole trap Lateral nonuniform charge MOS capacitor Oxide reliability Stress-induced leakage current Transmission line pulsing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62817
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62817
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spelling	sg-nus-scholar.10635-628172015-03-21T23:03:52Z Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing Lim, P.S. Chim, W.K. ELECTRICAL ENGINEERING C-V measurement Electrical annealing Electrostatic discharge Hole trap Lateral nonuniform charge MOS capacitor Oxide reliability Stress-induced leakage current Transmission line pulsing Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 4 B 2652-2655 JAPLD 2014-06-17T06:55:10Z 2014-06-17T06:55:10Z 1999 Article Lim, P.S.,Chim, W.K. (1999). Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (4 B) : 2652-2655. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/62817 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	C-V measurement Electrical annealing Electrostatic discharge Hole trap Lateral nonuniform charge MOS capacitor Oxide reliability Stress-induced leakage current Transmission line pulsing
spellingShingle	C-V measurement Electrical annealing Electrostatic discharge Hole trap Lateral nonuniform charge MOS capacitor Oxide reliability Stress-induced leakage current Transmission line pulsing Lim, P.S. Chim, W.K. Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lim, P.S. Chim, W.K.
format	Article
author	Lim, P.S. Chim, W.K.
author_sort	Lim, P.S.
title	Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
title_short	Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
title_full	Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
title_fullStr	Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
title_full_unstemmed	Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
title_sort	stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62817
_version_	1681085845018247168

Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing

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