Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chim, W.K., Lim, P.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82611
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Institution: National University of Singapore