Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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Main Authors: | , |
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Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82611 |
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Institution: | National University of Singapore |