Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement

Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chim, W.K., Lim, P.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electrostatic discharge
Flicker noise
Hot carrier
Interface state
Latent damage
Oxide trap charge
Silicon dioxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82611
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-826112024-11-14T10:20:38Z Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement Chim, W.K. Lim, P.S. ELECTRICAL & COMPUTER ENGINEERING Electrostatic discharge Flicker noise Hot carrier Interface state Latent damage Oxide trap charge Silicon dioxide Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 12 6770-6777 JAPND 2014-10-07T04:31:25Z 2014-10-07T04:31:25Z 2001-12 Article Chim, W.K.,Lim, P.S. (2001-12). Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12) : 6770-6777. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/82611 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Electrostatic discharge
Flicker noise
Hot carrier
Interface state
Latent damage
Oxide trap charge
Silicon dioxide
spellingShingle Electrostatic discharge
Flicker noise
Hot carrier
Interface state
Latent damage
Oxide trap charge
Silicon dioxide
Chim, W.K.
Lim, P.S.
Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
description Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chim, W.K.
Lim, P.S.
format Article
author Chim, W.K.
Lim, P.S.
author_sort Chim, W.K.
title Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
title_short Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
title_full Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
title_fullStr Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
title_full_unstemmed Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
title_sort latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82611
_version_ 1821193248514768896

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