Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation

Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation

Electronics Letters

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Bibliographic Details
Main Authors: Ling, C.H., Cheng, Z.Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Carrier lifetime
Chemical vapour deposition
Electron traps
Minority carriers
Silicon dioxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81305
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81305

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