Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chim, W.K., Cho, B.J., Yue, J.M.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Channel width
Charge pumping
Charge trapping
Electric field
Hot carrier
Impact ionization
Interface state
LOCOS
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56220
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/56220

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