Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chim, W.K., Cho, B.J., Yue, J.M.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Channel width
Charge pumping
Charge trapping
Electric field
Hot carrier
Impact ionization
Interface state
LOCOS
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56220
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-562202024-11-14T10:19:49Z Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure Chim, W.K. Cho, B.J. Yue, J.M.P. ELECTRICAL & COMPUTER ENGINEERING Channel width Charge pumping Charge trapping Electric field Hot carrier Impact ionization Interface state LOCOS MOSFET Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 1 47-53 JAPND 2014-06-17T02:52:06Z 2014-06-17T02:52:06Z 2002 Article Chim, W.K.,Cho, B.J.,Yue, J.M.P. (2002). Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (1) : 47-53. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/56220 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Channel width
Charge pumping
Charge trapping
Electric field
Hot carrier
Impact ionization
Interface state
LOCOS
MOSFET
spellingShingle Channel width
Charge pumping
Charge trapping
Electric field
Hot carrier
Impact ionization
Interface state
LOCOS
MOSFET
Chim, W.K.
Cho, B.J.
Yue, J.M.P.
Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
description Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chim, W.K.
Cho, B.J.
Yue, J.M.P.
format Article
author Chim, W.K.
Cho, B.J.
Yue, J.M.P.
author_sort Chim, W.K.
title Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
title_short Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
title_full Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
title_fullStr Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
title_full_unstemmed Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
title_sort hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56220
_version_ 1821183545856491520

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