Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56220 |
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| Institution: | National University of Singapore |