High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

10.1109/LED.2003.814011

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Bibliographic Details
Main Authors: Ang, D.S., Phua, T.W.H., Liao, H., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Subjects:
Charge pumping current
High-energy tail
Hot-carrier stress
Interface states
N-MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84411
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84411

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