High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
10.1109/LED.2003.814011
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Others |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84411 |
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| Institution: | National University of Singapore |