A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment

10.1109/TED.2002.805610

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Bibliographic Details
Main Authors: Liao, H., Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate oxide integrity
Hot-carrier reliability
Indium dopant
Interface traps
Super-steep retrograde channel
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81854
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81854

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