Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

10.1117/12.405423

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Bibliographic Details
Main Authors: Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Ihdium
Reverse short channel effects
Short channel effects
Steep retrograde channel profile
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50644
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/50644

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