Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

10.1117/12.405423

Saved in:

Bibliographic Details
Main Authors:	Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Ihdium Reverse short channel effects Short channel effects Steep retrograde channel profile
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/50644
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-50644
record_format	dspace
spelling	sg-nus-scholar.10635-506442023-10-31T20:06:29Z Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication Ong, S.Y. Chor, E.F. Leung, Y.K. Lee, J. Li, W.S. See, A. Chan, L. ELECTRICAL ENGINEERING PHYSICS Ihdium Reverse short channel effects Short channel effects Steep retrograde channel profile 10.1117/12.405423 Proceedings of SPIE - The International Society for Optical Engineering 4228 270-278 PSISD 2014-04-23T03:02:17Z 2014-04-23T03:02:17Z 2000 Conference Paper Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L. (2000). Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication. Proceedings of SPIE - The International Society for Optical Engineering 4228 : 270-278. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405423 0277786X http://scholarbank.nus.edu.sg/handle/10635/50644 000167995500033 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ihdium Reverse short channel effects Short channel effects Steep retrograde channel profile
spellingShingle	Ihdium Reverse short channel effects Short channel effects Steep retrograde channel profile Ong, S.Y. Chor, E.F. Leung, Y.K. Lee, J. Li, W.S. See, A. Chan, L. Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
description	10.1117/12.405423
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ong, S.Y. Chor, E.F. Leung, Y.K. Lee, J. Li, W.S. See, A. Chan, L.
format	Conference or Workshop Item
author	Ong, S.Y. Chor, E.F. Leung, Y.K. Lee, J. Li, W.S. See, A. Chan, L.
author_sort	Ong, S.Y.
title	Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
title_short	Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
title_full	Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
title_fullStr	Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
title_full_unstemmed	Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
title_sort	steep retrograde indium channel profiling for high performance nmosfets device fabrication
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/50644
_version_	1781411601423794176

Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

Similar Items