Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

• Main Authors: Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Ihdium; Reverse short channel effects; Short channel effects; Steep retrograde channel profile
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/50644
• Institution: National University of Singapore

10.1117/12.405423