A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment

10.1109/TED.2002.805610

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Bibliographic Details
Main Authors:	Liao, H., Ang, D.S., Ling, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate oxide integrity Hot-carrier reliability Indium dopant Interface traps Super-steep retrograde channel
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81854
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-818542023-10-29T22:27:36Z A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment Liao, H. Ang, D.S. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME Gate oxide integrity Hot-carrier reliability Indium dopant Interface traps Super-steep retrograde channel 10.1109/TED.2002.805610 IEEE Transactions on Electron Devices 49 12 2254-2262 IETDA 2014-10-07T04:22:28Z 2014-10-07T04:22:28Z 2002-12 Article Liao, H., Ang, D.S., Ling, C.H. (2002-12). A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment. IEEE Transactions on Electron Devices 49 (12) : 2254-2262. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2002.805610 00189383 http://scholarbank.nus.edu.sg/handle/10635/81854 000180982000020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Gate oxide integrity Hot-carrier reliability Indium dopant Interface traps Super-steep retrograde channel
spellingShingle	Gate oxide integrity Hot-carrier reliability Indium dopant Interface traps Super-steep retrograde channel Liao, H. Ang, D.S. Ling, C.H. A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
description	10.1109/TED.2002.805610
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liao, H. Ang, D.S. Ling, C.H.
format	Article
author	Liao, H. Ang, D.S. Ling, C.H.
author_sort	Liao, H.
title	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
title_short	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
title_full	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
title_fullStr	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
title_full_unstemmed	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
title_sort	comprehensive study of indium implantation-induced damage in deep submicrometer nmosfet: device characterization and damage assessment
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81854
_version_	1781783999655444480

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment

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