A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
10.1109/TED.2002.805610
Saved in:
Main Authors: | Liao, H., Ang, D.S., Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81854 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
by: Ong, S.Y., et al.
Published: (2014) -
Modelling of the "Gated-diode" configuration in bulk MOSFET's
by: Yip, A., et al.
Published: (2014) -
Modelling of the "Gated-diode" configuration in bulk MOSFET's
by: Yip, A., et al.
Published: (2014) -
Characterization of hot carrier reliability in deep submicronmeter MOSFETs
by: LIAO HONG
Published: (2010) -
A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET
by: Ang, D.S., et al.
Published: (2014)