Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements

• Main Authors: Chim, W.K., Wong, K.M., Yeow, Y.T., Hong, Y.D., Lei, Y., Teo, L.W., Choi, W.K.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Interface trap; Oxide quality; Scanning capacitance microscopy (SCM); Semiconductor dopant extraction
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/50983
• 機構: National University of Singapore

10.1109/LED.2003.817390