Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements

Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements

10.1109/LED.2003.817390

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Bibliographic Details
Main Authors: Chim, W.K., Wong, K.M., Yeow, Y.T., Hong, Y.D., Lei, Y., Teo, L.W., Choi, W.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Interface trap
Oxide quality
Scanning capacitance microscopy (SCM)
Semiconductor dopant extraction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50983
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/50983

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