Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

• المؤلفون الرئيسيون: Husein, Sebastian, Stuckelberger, Michael, West, Bradley, Ding, Laura, Dauzou, Fabien, Morales-Masis, Monica, Duchamp, Martial, Holman, Zachary, Bertoni, Mariana I.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Materials; Carrier Scattering; Hydrogen-doped Indium Oxide
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82954; http://hdl.handle.net/10220/47561
• المؤسسة: Nanyang Technological University

Hydrogen-doped indium oxide (IO:H) has recently garnered attention as a high-performance transparent conducting oxide (TCO) and has been incorporated into a wide array of photovoltaic devices due to its high electron mobility (>100 cm2/V s) and transparency (>90% in the visible range). Here, w...