Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET

Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET

10.1109/TED.2004.838447

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Bibliographic Details
Main Authors: Ang, D.S., Liao, H., Phua, T.W.H., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge pumping current
High-energy tail (HET) electrons
Hot-carrier-induced degradation
Substrate-enhanced gate current
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82304
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82304

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