Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET
10.1109/TED.2004.838447
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sg-nus-scholar.10635-823042023-10-30T23:05:53Z Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET Ang, D.S. Liao, H. Phua, T.W.H. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING Charge pumping current High-energy tail (HET) electrons Hot-carrier-induced degradation Substrate-enhanced gate current 10.1109/TED.2004.838447 IEEE Transactions on Electron Devices 51 12 2246-2248 IETDA 2014-10-07T04:27:48Z 2014-10-07T04:27:48Z 2004-12 Article Ang, D.S., Liao, H., Phua, T.W.H., Ling, C.H. (2004-12). Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET. IEEE Transactions on Electron Devices 51 (12) : 2246-2248. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.838447 00189383 http://scholarbank.nus.edu.sg/handle/10635/82304 000225362900042 Scopus |
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Singapore Singapore |
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Charge pumping current High-energy tail (HET) electrons Hot-carrier-induced degradation Substrate-enhanced gate current |
| spellingShingle |
Charge pumping current High-energy tail (HET) electrons Hot-carrier-induced degradation Substrate-enhanced gate current Ang, D.S. Liao, H. Phua, T.W.H. Ling, C.H. Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| description |
10.1109/TED.2004.838447 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ang, D.S. Liao, H. Phua, T.W.H. Ling, C.H. |
| format |
Article |
| author |
Ang, D.S. Liao, H. Phua, T.W.H. Ling, C.H. |
| author_sort |
Ang, D.S. |
| title |
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| title_short |
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| title_full |
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| title_fullStr |
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| title_full_unstemmed |
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET |
| title_sort |
evidence for a composite interface state generation mode in the che-stressed deep-submicrometer n-mosfet |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82304 |
| _version_ |
1781784104392458240 |