A fast measurement technique of MOSFET Id-Vg characteristics

• Main Authors: Shen, C., Li, M.-F., Wang, X.P., Yeo, Y.-C., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOSFETs; Reliability; Semiconductor device measurements; Trapping
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81867
• Institution: National University of Singapore

10.1109/LED.2005.861025