A fast measurement technique of MOSFET Id-Vg characteristics
10.1109/LED.2005.861025
Saved in:
Main Authors: | Shen, C., Li, M.-F., Wang, X.P., Yeo, Y.-C., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81867 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
by: Shen, C., et al.
Published: (2014) -
Analysis of the DCIV peaks in electrically stressed pMOSFETs
by: Jie, B.B., et al.
Published: (2014) -
Interface traps at high doping drain extension region in sub-0.25-μm MOSTs
by: Chen, G., et al.
Published: (2014) -
Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
by: Hou, Y.T., et al.
Published: (2014) -
Analysis of premature breakdown in high-power devices using IBIC microscopy
by: Zmeck, M., et al.
Published: (2014)